Which outcome results when a MOSFET's gate-source voltage exceeds reliability limits?

💡 Explanation

Channel hot carrier injection leads to device degradation because high electric fields accelerate carriers, gaining enough energy to surmount the Si/SiO2 interface barrier, causing damage. This process degrades performance, rather than improving subthreshold swing as implied by other options.

• Which cracking risk increases during closed-die forging of a high-strength steel component with insufficient die lubrication?
• Which outcome occurs when water flows through a Venturi meter with insufficient downstream pressure?
• Which emission effect occurs when exceeding the forward current limit of an LED display panel?
• Which outcome occurs when reciprocating engine crankshaft bearing clearance exceeds design limits?
• Which action occurs when CFC refrigerant leaks into stratosphere, exposing it to high-energy ultraviolet irradiation?
• Which failure occurs in automated assembly lines because of PLC cycle time?