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Which outcome results when a silicon crystal lattice contains phosphorus impurities?

A)Increased free electron concentration
B)Enhanced phonon scattering strength
C)Reduced hole carrier mobility
D)Augmented intrinsic thermal resistance

💡 Explanation

Introducing phosphorus causes n-type doping because each dopant contributes an electron available for conduction. This process exhibits extrinsic semiconductor behavior. Therefore, the free electron concentration increases, rather than changes in phonon behavior or hole concentration.

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