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Which outcome results when doping silicon within tunnel diodes?

A)Increased electron tunneling probability
B)Decreased device breakdown voltage
C)Augmented lattice vibrational frequency
D)Reduced electron effective mass

💡 Explanation

Doping creates a narrow depletion region, narrowing the region that electrons must tunnel through; *quantum tunneling* becomes more probable because the barrier width is reduced, therefore electron tunneling probability increases, rather than decreasing from an increased barrier width.

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