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Which outcome results when excessive doping narrows semiconductor band gaps?

A)Increased reverse bias leakage current
B)Improved radiative recombination lifetime
C)Higher thermal conductivity coefficient
D)Reduced piezoelectric charge generation

💡 Explanation

Increased doping causes band gap narrowing, which lowers the barrier for minority carriers to cross the junction due to increased tunneling via Zener breakdown; therefore, increased leakage becomes more prevalent, rather than improved recombination or altered thermal/piezoelectric properties occurring.

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