Which outcome results when gate oxide thickness in a MOSFET decreases to nanoscale dimensions?

💡 Explanation

When gate oxide thickness decreases to nanoscale, quantum tunneling occurs because electrons can tunnel through the insulating oxide layer even when the gate voltage is insufficient to form a channel. Therefore, increased subthreshold leakage current results, rather than reduced capacity, higher consumption, or lower capacitance which would depend on other parameters.

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