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Which performance issue may result when exceeding the reverse voltage threshold of a MOSFET's body diode junction?

A)Increased subthreshold leakage current
B)Thermal runaway due to avalanche
C)Reduced gate oxide breakdown voltage
D)Increased gate-source capacitance variation

💡 Explanation

Thermal runaway can occur because avalanche breakdown in the body diode junction leads to excessive current and heat. Therefore, exceeding the reverse voltage results in destructive thermal effects rather than minor parametric shifts such as leakage, because the junction is now dissipating significant power internally.

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