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Which phenomenon causes increased drain-source current when finFET channel length decreases?

A)Quantum tunneling through gate oxide
B)Increased impurity diffusion
C)Enhanced channel mobility
D)Reduced parasitic capacitance

💡 Explanation

Quantum tunneling increases because shorter channel lengths thin the potential barrier, allowing electrons to tunnel from source to drain rather than being blocked. Therefore, current increases because of tunneling, rather than mobility effects.

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