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Which phenomenon occurs when silicon carbide crystal lattice defects increase?

A)Reduced electron band gap energy
B)Enhanced thermal conductivity pathway
C)Increased crystalline fracture toughness
D)Greater resistance to chemical etching

💡 Explanation

Increased crystal defects creates localized energy states within the band gap, causing band gap narrowing because Shockley-Read-Hall recombination becomes more prominent; therefore, the band gap shrinks rather than thermal or mechanical enhancements under high defect concentrations.

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