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Which phenomenon reduces power conversion efficiency because increased grain boundaries in polycrystalline silicon?

A)Increased electron-hole recombination rate
B)Enhanced electron mobility overall
C)Decreased lattice phonon scattering
D)Reduced surface plasmon resonance loss

💡 Explanation

Increased grain boundaries provides recombination centers, causing increased electron-hole recombination rather than increased transfer or decreased scattering; this is because grain boundaries introduce defects that act as traps, therefore efficiency diminishes rather than increases at such defects.

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