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Which phenomenon reduces the efficiency of gallium arsenide (GaAs) solar cells when subjected to high electron density at grain boundaries?

A)Increased surface recombination velocity
B)Decreased diffusion length minority carriers
C)Auger recombination increased significantly
D)Enhanced Shockley-Read-Hall recombination (SRH)

💡 Explanation

An Auger recombination process causes a significant increase in electron-hole recombination at elevated densities because energy is transferred to another electron, rather than releasing a photon; therefore, the output decreases rather than from radiative recombination or SRH processes.

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