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← TechnologyWhich reliability risk increases within a bipolar junction transistor (BJT) circuit containing a Zener diode operating near its maximum rated power?
A)Increased junction thermal runaway✓
B)Amplification factor degradation
C)Collector-emitter voltage sag
D)Base current saturation effects
💡 Explanation
Junction thermal runaway risk increases because increased power dissipation in the Zener diode elevates its temperature, which raises the reverse leakage current. Therefore, with increased current, thermal runaway occurs, rather than normal stable operating conditions under rated specs.
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