Which risk increases if a metal-oxide-semiconductor (MOS) capacitor dielectric fails?

💡 Explanation

A dielectric failure in a MOS capacitor risks thermal runaway via increased gate leakage, because charge accumulation exceeds dissipation, therefore causing heat buildup leading to transistor damage, rather than improved damping.

• Which consequence results when optically pumped atoms emit simultaneously?
• Which bond weakening occurs when antibonding orbitals fill?
• Which consequence results when intense gravitational fields distort telescope optics?
• Which mechanism causes elliptical galaxy shapes rather than perfect spheres?
• Which outcome occurs when gravitational and inertial forces equate?
• Which phenomenon occurs from magnetic saturation in transformer cores?