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← ScienceWhich risk increases in crystalline semiconductor devices operating at elevated temperatures?
A)Intrinsic carrier concentration approaches dopant✓
B)Fermi level shifts into valence band
C)Exciton binding energy significantly increases
D)Phonon scattering blocks electron movement
💡 Explanation
Increased thermal energy excites electrons across the band gap, increasing intrinsic carrier concentration of the semiconductor, which weakens the effect of doping because intrinsic carriers overwhelm impurity carriers; therefore extrinsic behavior fails, rather than changes relating to Fermi level or exciton dynamics.
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