Which risk increases inside semiconductor flash memory when exceeding a critical temperature threshold?

💡 Explanation

Because the **quantum tunneling** probability escalates exponentially with temperature, stored electrons confined in the floating gate leak through the insulation; therefore stored data reliability decreases, decreasing storage longevity; rather than increased breakdown, which correlates directly with applied voltage.

• Which mechanism limits the Carnot engine's real-world efficiency?
• Which consequence results when a filter capacitor's series resistance increases in a switched-mode power supply?
• Which outcome occurs from excessive harmonic frequencies in AC power transmission?
• Which risk increases when a submarine's variable ballast capacitor reaches voltage breakdown?
• Which risk increases when injecting excess current into an electrochemical cell?
• Which outcome occurs when excessive voltage is applied to a parallel-plate capacitor?