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Which risk increases near flash memory cells when write voltages scale down?

A)Gate oxide dielectric breakdown accelerates
B)Adjacent cell interference becomes prominent
C)Channel hot carrier injection increases
D)Quantum tunneling leakage intensifies

💡 Explanation

When flash memory cells shrink, the insulating layers become thinner; therefore, quantum tunneling leakage increases because electrons are more likely to tunnel through the thinner insulation, rather than remaining confined.

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