Which risk increases notably when parasitic capacitance forms within a buck converter?

A)Gate driver MOSFET shoot-through failure✓

B)Increased core saturation within the inductor

C)Electrolyte dry-out in filtering capacitance

D)Reduced transformer primary-side magnetizing inductance

💡 Explanation

Gate driver MOSFET shoot-through is a risk because parasitic capacitance introduces unwanted switching, causing simultaneous conduction in high and low-side MOSFETs; therefore, shoot-through failure is the consequence, rather than inductor saturation or capacitor dry-out, occurring under normal operation.

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Which risk increases notably when parasitic capacitance forms within a buck converter?

💡 Explanation

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