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Which risk increases regarding germanium transistors at cryogenic temperatures?

A)Decreased collector-base leakage current
B)Increased channel electron mobility
C)Electron freeze-out from donor orbitals
D)Enhanced base-width modulation effects

💡 Explanation

Electron freeze-out from donor levels increases because at cryogenic temperatures, thermal energy is insufficient to ionize dopant atoms, therefore conductivity drops rather than electron mobility improvements or modulation effects which arise under different conditions.

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