Which risk increases to a microchip when electrostatic discharge exceeds junction capacity?

💡 Explanation

Gate oxide integrity fails because dielectric rupture occurs from exceeding breakdown voltage during electrostatic discharge (ESD). This provides direct current paths, therefore total chip failure occurs rather than other subtle parameter shifts caused by channel or doping variances under normal conditions.

• Which risk increases when excessive 'jitter' affects the encoder feedback within robotic arm's closed-loop control?
• Which outcome occurs when metal-oxide varistor (MOV) clamping circuit repeatedly absorbs high transient energy surges?
• Which outcome arises when refrigerant leaks from a refrigeration system using R-410A blend due to microcracks?
• Which risk increases in pre-stressed concrete beams when hydrogen permeation occurs during welding?
• Which outcome results when the PLC's watchdog timer unexpectedly triggers in a paper mill's stock preparation system?
• Which outcome results from increased load impedance in a power distribution transformer connected to multiple residential distribution systems?