Which risk increases to integrated circuits when exposed to intense electromagnetic pulse fields during geomagnetic storms?

💡 Explanation

When strong electromagnetic pulse fields are present, latch-up can occur because the parasitic bipolar transistors inherent in CMOS structures are triggered by induced currents, causing a high current flow. Therefore latch-up triggering results, rather than oxide breakdown, electromigration, or cracking that require different damage pathways.

• Which risk increases when a medical technetium-99m generator approaches its expiration date?
• Which mechanism reduces thermal efficiency when hot exhaust bypasses turbine blades in a Brayton cycle gas turbine?
• Which consequence results when differential thermal expansion strains a Francis turbine?
• Which outcome determines the drag coefficient regime when a sphere moves through a Newtonian fluid?
• Which radiation risk increases substantially in spent nuclear fuel pools during cooling?
• Which outcome occurs when a scanning tunneling microscope encounters surface contamination?