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← ScienceWhich risk increases when a 2nm gate oxide layer is reduced further?
A)Increased gate tunneling current✓
B)Reduced channel doping levels
C)Enhanced transistor switching speed
D)Decreased gate capacitance density
💡 Explanation
Increased gate tunneling current occurs as the insulating gate oxide thins because quantum tunneling allows electrons to pass through the potential barrier. Therefore current leakage rises, because tunneling dominates conduction rather than standard drift-diffusion at larger thicknesses.
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