VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which risk increases when a 2nm gate oxide layer is reduced further?

A)Increased gate tunneling current
B)Reduced channel doping levels
C)Enhanced transistor switching speed
D)Decreased gate capacitance density

💡 Explanation

Increased gate tunneling current occurs as the insulating gate oxide thins because quantum tunneling allows electrons to pass through the potential barrier. Therefore current leakage rises, because tunneling dominates conduction rather than standard drift-diffusion at larger thicknesses.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science