Which risk increases when a doped silicon crystal used in a high-power transistor undergoes rapid thermal cycling?

💡 Explanation

Kirkendall voids increase because repeated heating and cooling promotes differential diffusion rates within the crystal, concentrating vacancies. Therefore, voids form, leading to mechanical stress failures, rather than mobility increases which stable conditions favor.

• Which outcome limits ethene production when reactor pressure increases?
• Which effect results when the isentropic efficiency threshold for a gas turbine compressor drops sharply?
• Which outcome occurs when temperature exceeds a ferroelectric crystal's Curie point?
• Which outcome occurs when a metallurgical sample undergoes rapid quenching?
• Which mechanism causes chromatic dispersion when light pulses propagate through optical fiber communication lines?
• Which outcome occurs when a photovoltaic crystal experiences annealing?