Which risk increases when a flash memory cell is programmed?

💡 Explanation

Adjacent cell data can change due to Fowler-Nordheim tunneling. Erasing or programming a cell requires high voltage, because electrons tunnel through the oxide layer to charge the floating gate; therefore, a nearby cell may unintentionally gain charge rather than remain stable.

• Which outcome limits epoxy curing rate when humidity increases?
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• Which outcome accompanies a lossy dielectric between capacitor plates, energized by alternating voltage?
• Which consequence results when excessive optical pumping affects a laser cavity?