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Which risk increases when a flash memory chip must retain its stored charge at elevated temperature?

A)Data loss via Fowler-Nordheim tunneling
B)Increased channel hot carrier injection
C)Reduced gate oxide breakdown voltage
D)Increased substrate leakage currents

💡 Explanation

Data loss risk increases as increased temperature exponentially raises electron energy; this enhances Fowler-Nordheim tunneling through oxide layers, causing charge leakage. Therefore data retention fails, rather than hot carrier injection dominating at lower temperatures or oxide breakdown being purely voltage driven.

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