Which risk increases when a MOSFET's gate oxide degrades?

💡 Explanation

Increased gate leakage current occurs due to trap-assisted tunneling. The mechanism is that defects in the oxide create intermediate energy states. This increases tunneling probability through the band gap, therefore current increases, rather than alternatives that involve channel effects.

• Which efficiency loss occurs when a turbojet engine's turbine overheats?
• Which behavior occurs when operating nuclear fuel rods near voiding?
• Which consequence results when a resonant cavity containing a non-linear crystal experiences excessive pulsed laser energy?
• Which risk increases when unpolarized signals enter fiber optics?
• Which failure occurs when piezoelectric crystal capacitance drifts?
• Which mechanism causes increased tunneling current across a MOSFET's gate oxide when oxide thickness decreases below 2nm?