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← ScienceWhich risk increases when a MOSFET's gate oxide layer decreases?
A)Increased electron hot carrier injection✓
B)Reduced channel length modulation
C)Improved subthreshold swing performance
D)Lower gate tunneling probability leakage
💡 Explanation
Decreasing the gate oxide thickness in a MOSFET raises the electric field, because it allows electrons to gain more energy; therefore, hot carrier injection becomes more likely, rather than improved performance, under stress bias conditions.
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