Which risk increases when a polysilicon gate oxidation thermal budget limit is exceeded?

A)Threshold voltage parameter drifting wider✓

B)Increased carrier mobility degradation occurs

C)Latch-up susceptibility is greatly minimized

D)Substrate channel length decreases rapidly

💡 Explanation

Threshold voltage shifts occur because exceeding the thermal budget during oxidation broadens the energy distribution and tail states near the Si/SiO2 interface via interface trap generation. It reduces the effective channel and therefore, increases threshold voltage drift rather than other electrical characteristics.

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Which risk increases when a polysilicon gate oxidation thermal budget limit is exceeded?

💡 Explanation

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