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← ScienceWhich risk increases when a semiconductor diode crystal contains numerous interstitial defects?
A)Excessive reverse bias current leakage✓
B)Increased threshold voltage stability
C)Enhanced thermal runaway stability
D)Improved forward voltage regulation
💡 Explanation
Excessive reverse bias leakage current increases because the interstitial defects introduce energy levels within the band gap, enabling tunneling; therefore, carriers conduct at lower voltages, rather than behaving as an insulator absent those mid-gap states promoting conduction.
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