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Which risk increases when a semiconductor fabrication process marginally exceeds allowable temperature limits, affecting diffusion?

A)Threshold voltage parameter variation increases
B)Oxidation rate variations are mitigated
C)Channel length modulation is stabilized
D)Substrate doping concentration remains constant

💡 Explanation

Higher temperatures enhance dopant Difussion, because the Arrhenius equation dictates exponential increase in diffusion coefficient with temperature. Therefore, threshold variance rises rather than oxidation stabilization, since precise control is lost due to temperature deviations.

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