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Which risk increases when a semiconductor’s doping concentration increases beyond a threshold?

A)Decreased gate oxide breakdown voltage
B)Increased thermally activated electron mobility
C)Quantum tunneling between close orbitals
D)Suppression of electron-phonon interactions

💡 Explanation

As doping concentration rises, the distance between dopant atoms shrinks, and the potential barrier width decreases; quantum tunneling between close orbitals increases the likelihood that electrons will tunnel through. This results in reduced confinement rather than increased. Therefore, C rather than A, B, or D.

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