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Which risk increases when ambient temperature affects MOSFET threshold voltage?

A)Thermal runaway and device failure
B)Reduced gate oxide breakdown strength
C)Increased source/drain junction capacitance
D)Elimination of channel length modulation

💡 Explanation

Thermal runaway is more likely because increased temperature lowers the MOSFET threshold voltage, leading to higher current leakage. The increased leakage causes more heat generation; therefore, the transistor can fail via overheating, rather than the other failure mechanisms.

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