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Which risk increases when an electron's de Broglie wavelength approaches transistor gate oxide thickness?

A)Increased gate leakage current
B)Reduced channel carrier mobility
C)Enhanced thermal runaway effects
D)Increased substrate parasitic capacitance

💡 Explanation

A shorter wavelength relative to the oxide allows electron Quantum Tunneling through the gate dielectric, because of a non-zero probability of traversing the barrier. This dramatically raises gate leakage current, therefore increased leakage is the main outcome, rather than mobility reduction that requires a channel change.

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