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← TechnologyWhich risk increases when an ungrounded operator works near an exposed MOSFET gate?
A)Electrostatic discharge damage occurs✓
B)Increased thermal runaway occurs
C)Latch-up susceptibility increases
D)Substrate bias current accumulates
💡 Explanation
Electrostatic discharge damage increases because the **gate oxide breakdown** mechanism occurs when high voltage transfers from the operator to the gate capacitance. This damages its insulating properties, therefore performance degrades faster, rather than thermal changes due to biasing effects as an energy source.
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