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Which risk increases when doping silicon disrupts tetrahedral symmetry?

A)Increased electron-hole recombination rate
B)Decreased carrier mobility overall
C)Increased radiative efficiency achieved
D)Decreased impurity scattering amountly

💡 Explanation

Excess dopants introduce defects; therefore defects increase electron-hole recombination because the *Shockley-Read-Hall recombination* mechanism provides intermediate energy states within the bandgap, capturing carriers and promoting recombination; rather than radiative transition occurring.

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