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← ScienceWhich risk increases when electrons exceed the drift velocity within a semiconductor?
A)Enhanced carrier scattering reduces mobility
B)Significant piezoelectric voltage generation begins
C)Increased Zener breakdown destroys lattice
D)Runaway thermal generation causes damage✓
💡 Explanation
Thermal runaway occurs due to increased current density leading to enhanced Joule heating, if electron drift velocity is excessive. Impact ionization is magnified because of this, resulting in further electron-hole pair generation; therefore, runaway is the answer rather than merely scattering or piezoelectricity.
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