Which risk increases when electrons tunnel through MOSFET gate oxide?

💡 Explanation

Increased threshold voltage instability occurs because charge trapping via Fowler-Nordheim tunneling accumulates hot electrons and injects them into gate oxide defects; therefore causing threshold shift, rather than other effects related to carriers in the channel.

• Which effect is disrupted affecting digital holograms when laser coherence degrades?
• Which mechanism limits charge transfer in solid ionic conductors?
• Which outcome occurs when a femtosecond laser pulse exhibits third-order dispersion within an optical fiber?
• Which outcome occurs when an oxidation reaction reaches dynamic equilibrium in a catalytic converter?
• Which outcome occurs when high-pressure liquid water flashes to steam in a turbine?
• Which efficiency decrease occurs with turbine blade scaling?