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Which risk increases when electrostatic discharge damages a diode junction?

A)Increased reverse leakage current
B)Decreased forward voltage drop
C)Higher switching frequency capability
D)Enhanced thermal dissipation capacity

💡 Explanation

Increased reverse leakage current increases because ESD causes dielectric breakdown at the p-n junction, creating conductive paths bypassing normal diode behavior. Therefore, the diode leaks current even when reverse biased, rather than blocking it as it should.

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