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← ScienceWhich risk increases when embedded gate oxide capacitors in MOSFETs degrade?
A)Surface acoustic wave interference
B)Threshold voltage instability✓
C)Increased minority carrier mobility
D)Dielectric constant enhancement
💡 Explanation
Gate oxide degradation leads to charge trapping, causing threshold voltage INSTABILITY because the effective gate voltage shifts through charge accumulation. Therefore, threshold voltage shift emerges rather than acoustic waves or altered carrier mobilities due to dielectric wear.
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