VibraXX
Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter Arena
HomeCategoriesScienceQuestion
Question
Science

Which risk increases when embedded gate oxide capacitors in MOSFETs degrade?

A)Surface acoustic wave interference
B)Threshold voltage instability
C)Increased minority carrier mobility
D)Dielectric constant enhancement

💡 Explanation

Gate oxide degradation leads to charge trapping, causing threshold voltage INSTABILITY because the effective gate voltage shifts through charge accumulation. Therefore, threshold voltage shift emerges rather than acoustic waves or altered carrier mobilities due to dielectric wear.

🏆 Up to £1,000 monthly prize pool

Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.

⚡ Enter Arena

Related Questions

Browse Science