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Which risk increases when excessive bias voltage is applied across a semiconductor junction?

A)Avalanche breakdown causes increased current
B)Increased thermal carrier recombination occurs
C)Increased channel length modulation arises
D)Ohmic contact resistance losses decrease

💡 Explanation

Excessive bias generates high electric fields; therefore, avalanche breakdown occurs because accelerated electrons impact other atoms, liberating more electrons, leading to a cascade of carriers and increased current, rather than increased thermal carrier recombination.

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