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Which risk increases when hydrostatic pressure narrows an intrinsic semiconductor's band?

A)Increased avalanche diode reverse recovery
B)Augmented material phonon generation
C)Elevated probability of Zener tunneling
D)Decreased second breakdown susceptibility

💡 Explanation

Elevated pressure reducing the band gap distance increases Zener tunneling activity because quantum tunneling probability exponentially scales with decreasing barrier width; therefore Zener tunneling becomes more likely, rather than decreased diode recovery, or changed breakdown otherwise controlled by doping factors.

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