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Which risk increases when integrated circuits experience electromigration at elevated temperatures?

A)Formation of surface oxygen vacancies
B)Increased dislocation climb activity
C)Dopant atoms form precipitates
D)Kirkendall void and material clustering

💡 Explanation

Kirkendall voids and material clustering increase because electromigration causes atoms to diffuse along the crystal lattice due to high current densities. This uneven flux forms voids, therefore creating failure rather than enhanced structure or stable dopant diffusion.

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