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Which risk increases when MOSFET gate oxide capacitance degrades?

A)Threshold voltage instability arises
B)Substrate doping concentration decreases
C)Channel mobility spontaneously increases
D)Drain-source on-resistance decreases

💡 Explanation

Increased risk of threshold voltage instability arises because hot carrier injection becomes more effective at trapping charges following reduction of the gate's coupling capacitance. This shifts the threshold, therefore instability results, rather than increased speed or resistance.

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