Live Quiz Arena
🎁 1 Free Round Daily
⚡ Enter ArenaQuestion
← TechnologyWhich risk increases when parasitic capacitance is not mitigated in high-frequency MOSFET circuits?
A)Decreased switching speed saturation
B)Gate oxide rupture probability
C)Increased power dissipation losses✓
D)Increased thermal runaway probability
💡 Explanation
Increased power dissipation losses occur because parasitic capacitance causes the MOSFETs to consume additional power during switching operations through increased current flow during the Miller effect. Therefore, energy loss is higher, rather than gate rupture, because the gate is now being overdriven.
🏆 Up to £1,000 monthly prize pool
Ready for the live challenge? Join the next global round now.
*Terms apply. Skill-based competition.
Related Questions
Browse Technology →- During satellite communication, which outcome usually occurs when atmospheric ducting forms beyond designed tolerance?
- Which risk increases when an electrical power distribution system operates continuously unbalanced across three phases?
- Which operational problem arises when aircraft landing gear doors experience asymmetric aerodynamic loading on descent?
- Which risk increases when welding high-strength steel without preheating electrodes?
- Which positional error increases in robotic arms when joint calibration degrades because accumulated encoder error affects kinematic transformations?
- Which risk increases when excessive creep strain accumulates in post-tensioned concrete bridge girders?
