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Which risk increases when partially spatially coherent light illuminates patterned silicon wafers?

A)Speckle contrast from surface roughness
B)Increased optical material absorption
C)Reduced photolithography feature resolution
D)Greater chromatic aberration artifacts

💡 Explanation

Significant variations in optical path lengths give rise to speckle contrast. Enhanced spatial coherence yields amplified interference fringes because each point acts as a coherent source; therefore speckle artifacts are more pronounced, rather than blurred resolutions driven by incoherent sources.

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