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Which risk increases when polysilicon deposition exceeds the threshold rate?

A)Increased crystal defect formation rate
B)Reduced charge carrier mobility
C)Elevated thin film stress levels
D)Augmented grain boundary segregation

💡 Explanation

Increased deposition rate supplies excess silicon atoms without sufficient time to align correctly, therefore promoting increased crystal defect formation rate due to limited surface diffusion, rather than uniform crystal expansion under controlled conditions.

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