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← TechnologyWhich risk increases when reverse bias voltage exceeds gallium-nitride Schottky diode's avalanche threshold?
A)Controlled Zener effect breakdown
B)Depletion region capacitance boost
C)Runaway current amplification✓
D)Increased thermal carrier density
💡 Explanation
Exceeding avalanche reverse voltage induces impact ionization; the increased current generates heat, leading to further ionization in a positive feedback loop i.e. thermal runaway. Therefore, runaway current creates destructive heating, rather than a controlled effect or increased thermal carriers alone.
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