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Which risk increases when reverse voltage exceeds the Zener knee voltage across a silicon diode's P-N junction?

A)Uncontrolled avalanche breakdown occurs
B)Forward bias current linearly increases
C)Thermal equilibrium destabilizes the device
D)Depletion region capacitance minimizes

💡 Explanation

Uncontrolled avalanche breakdown occurs because impact ionization amplifies reverse current, rather than causing a linear increase. This specific breakdown is due to the the avalanche effect, therefore forward bias current is not present rather than thermal processes disrupting the junction.

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