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Which risk increases when strain-induced defects alter a perovskite crystal lattice?

A)Increased nonradiative electron-hole recombination
B)Enhanced Auger electron generation
C)Improved electron mobility through channels
D)Suppressed thermal boundary resistance

💡 Explanation

Increased nonradiative electron-hole recombination occurs because strain causes crystal imperfections that introduce energy levels within the band gap enabling the Shockley-Read-Hall mechanism. Therefore defects act as recombination centers, rather than improving mobility because perfect lattice order optimizes carrier transport.

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