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Which risk increases when using avalanche photodiodes near breakdown?

A)Oscillation susceptibility increases rapidly
B)Thermal runaway risk accelerates greatly
C)Reverse saturation decays erratically
D)Charge carrier depletion happens constantly

💡 Explanation

Thermal runaway risk accelerates greatly because impact ionization generates significant heat at the junction, therefore increased temperatures drastically lower the breakdown voltage rather than allowing stable operation, resulting in uncontrolled current, unlike lower temperatures.

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