Which risk increases within sub-10nm FinFET transistors nearing manufacturing limits?

💡 Explanation

Increased scaling pushes the gate closer to the source/drain; *electron quantum tunneling* increases because electron wavefunctions penetrate the insulating barrier separating them, therefore off-state leakage increases, rather than other carrier effects that are less sensitive to gate oxide thickness at these scales.

• Which consequence results when halide perovskite solar cells degrade?
• Which limit is reached as Carnot engine irreversibilities decrease?
• Which outcome occurs when a high-powered laser is pulsed through a lens?
• Which mechanism diminishes performance when integrated circuit gate oxide thickness decreases excessively?
• Which change accompanies increased temperature in photovoltaic systems?
• Which outcome occurs when electrons tunnel through silicon dioxide?