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← ScienceWhich risk occurs when silicon carbide MOSFETs approach avalanche breakdown?
A)Increased channel resistance appears
B)Band-to-band tunneling increases sharply✓
C)Gate oxide breakdown propagates faster
D)Threshold voltage shifts erratically
💡 Explanation
Increased band-to-band tunneling can occur due to the high electric field near the blocking junction; this impact ionization causes a rapid increase in carriers because applied voltages are elevated rather than thermal runaway, therefore significant current increase is promoted.
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